FDT434P
Manufacturer:
On Semiconductor
Mfr.Part #:
FDT434P
Datasheet:
Description:
MOSFETs SOT-223-4 SMD/SMT P-Channel number of channels:1 3 W -20 V Continuous Drain Current (ID):6 A
| Parameter | Value |
|---|---|
| Voltage Rating (DC) | -20 V |
| Length | 6.5 mm |
| Width | 3.56 mm |
| Termination | SMD/SMT |
| Max Operating Temperature | 150 °C |
| Min Operating Temperature | -55 °C |
| Number of Pins | 4 |
| Resistance | 50 mΩ |
| Height | 1.6 mm |
| Packaging | Reel |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| RoHS | Compliant |
| REACH SVHC | No SVHC |
| Weight | 0.2502 g |
| Number of Elements | 1 |
| Current Rating | -5.5 A |
| Lifecycle Status | EOL (Last Updated: 5 months ago) |
| Max Power Dissipation | 3 W |
| Power Dissipation | 3 W |
| Threshold Voltage | -600 mV |
| Number of Channels | 1 |
| Input capacitance | 1.187 nF |
| Continuous Drain Current (ID) | 6 A |
| Rds On Max | 50 mΩ |
| Drain to Source Voltage (Vdss) | -20 V |
| Turn-On Delay Time | 8 ns |
| Turn-Off Delay Time | 45 ns |
| Element Configuration | Single |
| Rise Time | 15 ns |
| Dual Supply Voltage | 20 V |
| Drain to Source Resistance | 50 mΩ |
| Max Junction Temperature (Tj) | 150 °C |
| Nominal Vgs | -600 mV |
| Gate to Source Voltage (Vgs) | 8 V |
| Drain to Source Breakdown Voltage (Vds) | -20 V |
| Manufacturer Lifecycle Status | LAST SHIPMENTS (Last Updated: 5 months ago) |
| FET Type(Transistor Polarity) | P-Channel |
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